User manual PHILIPS BLF278 DATA SHEET

[. . . ] It must never be thrown out with the general or domestic waste. 2003 Sep 19 2 Philips Semiconductors Product Specification VHF push-pull power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL Per transistor section VDS VGS ID Ptot Tstg Tj drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature Tmb 25 °C; total device; both sections equally loaded - - - - -65 - 125 ±20 18 500 150 200 PARAMETER CONDITIONS MIN. BLF278 MAX. UNIT V V A W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER CONDITIONS VALUE max. 0. 15 UNIT K/W K/W thermal resistance from junction total device; both sections to mounting base equally loaded. [. . . ] 10 mm leads 2 × 7 mm length 19. 5 mm width 6 mm 2222 809 09006 C27 C29 C30 C31, C32 L1, L2 L3, L4 L5, L6 L7, L8 L9, L10 L11, L16 L12, L15 L13, L14 stripline; note 2 43 2003 Sep 19 9 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 COMPONENT L17, L18 L19, L20 L21, L23 L22 DESCRIPTION stripline; note 2 stripline; note 2 stripline; note 2 semi-rigid cable; note 3 43 43 50 50 VALUE DIMENSIONS length 24. 5 mm width 6 mm length 66 mm width 6 mm length 160 mm width 4. 8 mm ext. 3. 6 mm outer conductor length 160 mm CATALOGUE NO. R1 R2, R7 R3, R6 R4, R5 R8, R9 R10 R11 IC1 T1 Notes metal film resistor 10 turn potentiometer metal film resistor metal film resistor metal film resistor metal film resistor metal film resistor voltage regulator 78L05 1:1 Balun; 7 turns type 4C6 50 coaxial cable wound around toroid 10 , 0. 4 W 50 k 3 × 12. 1 in parallel, 0. 4 W 10 ; 0. 4 W 10 ±5%, 1 W 4 × 10 in parallel, 1 W 5. 11 k, 1 W 14 × 9 × 5 mm 4322 020 90770 1. American Technical Ceramics capacitor, type 100B or capacitor of same quality. L1 to L10, L13, L14, L17 to L21 and L23 are striplines on a double copper-clad printed-circuit board, with fibre-glass PTFE dielectric (r = 2. 2), thickness 1/16 inch; thickness of copper sheet 2 × 35 µm. L22 is soldered on to stripline L21. 2003 Sep 19 10 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 handbook, full pagewidth 130 strap 150 strap strap strap strap 100 strap strap strap C20 V DD1 50 input T1 IC1 R11 C36 C11 C8 R2 and R7 C9 C13 R3 R4 C7 L5 L6 R5 R6 C10 C14 C18 C23 L7 L8 C17 slider R2 C12 C1 C3 R1 C2 C4 C35 C22 L11 C16 R8 L11 V DD1 L12 L9 L10 L13 C26 L14 L15 L17 C27 L18 L21 C31 L19 C29 C28 L20 L23 V DD2 R10 C30 C34 C32 C33 L22 C21 50 output L1 C5 L2 C6 L3 L4 C15 slider R7 L16 R9 L16 C19 C24 MBC438 C25 Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. (2) Th = 70 °C. Fig. 20 Load power as a function of input power; typical values. 2003 Sep 19 14 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. 2003 Sep 19 R2 C10 R8 C15 C11 C8 C16 C24 L14 A R3 50 input Philips Semiconductors handbook, full pagewidth VHF push-pull power MOS transistor +VDD1 C14 C22 C23 , , , , , , L1 L2 L3 +VDD1 R11 C3 C1 R1 C2 C4 , , , , , , R4 L4 L6 L8 L10 C5 C6 C7 L5 L7 L9 L11 R5 C9 C12 A R6 C13 C35 R7 C37 C36 D. U. T. , , , , L15 L12 L18 L20 C31 C33 R10 , , L22 , , , , C20 C21 C28 C29 L13 L19 L21 L16 C17 C25 C18 R9 L17 C26 C19 C27 +VDD2 C30 C34 C32 , , L23 L24 MGE617 50 output 15 IC1 C38 Product Specification BLF278 Fig. 21 Class-AB test circuit at f = 225 MHz. Philips Semiconductors Product Specification VHF push-pull power MOS transistor List of components (see Figs 21 and 22). COMPONENT C1, C2 C3, C4, C31, C32 C5 C6, C30 C7 C8, C9, C15, C18 C10, C13, C14, C19, C36 C11, C12 C16, C17 C20 C21 C22, C27, C37, C38 C23, C26, C35 C24, C25 C28 DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 film dielectric trimmer film dielectric trimmer multilayer ceramic chip capacitor; note 1 MKT film capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 1 film dielectric trimmer multilayer ceramic chip capacitor; note 1 electrolytic capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 stripline; note 2 semi-rigid cable; note 3 VALUE 27 pF, 500 V 3 × 18 pF in parallel, 500 V 4 to 40 pF 2 to 18 pF 100 pF, 500 V 1 µF, 63 V 100 nF, 50 V 2 × 1 nF in parallel, 500 V 220 µF, 63 V 3 × 33 pF in parallel, 500 V 2 to 9 pF 1 nF, 500 V 10 µF, 63 V 2 × 470 pF in parallel, 500 V 2 × 10 pF + 1 × 18 pF in parallel, 500 V 2 × 5. 6 pF in parallel, 500 V 5. 6 pF, 500 V 50 50 length 80 mm width 4. 8 mm ext. 3. 6 mm outer conductor length 80 mm length 24 mm width 6 mm length 14. 5 mm width 6 mm length 4. 4 mm width 6 mm length 3. 2 mm width 6 mm length 15 mm width 6 mm DIMENSIONS BLF278 CATALOGUE NO. 2222 809 08002 2222 809 09006 2222 371 11105 2222 852 47104 2222 809 09005 C29 C33, C34 L1, L3, L22, L24 L2, L23 L4, L5 L6, L7 L8, L9 L10, L11 L12, L13 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 43 43 43 43 43 2003 Sep 19 16 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 COMPONENT L14, L17 L15, L16 DESCRIPTION 2 × grade 3B Ferroxcube wideband HF chokes in parallel 13/4 turns enamelled 2 mm copper wire stripline; note 2 stripline; note 2 metal film resistor 10 turns potentiometer metal film resistor metal film resistor metal film resistor metal film resistor metal film resistor voltage regulator 78L05 VALUE DIMENSIONS CATALOGUE NO. 10 mm leads 2 × 7 mm space 1 mm length 13 mm width 6 mm length 29. 5 mm width 6 mm L18, L19 L20, L21 R1 R2, R7 R3, R6 R4, R5 R8, R9 R10 R11 IC1 Notes 43 43 10 , 0. 4 W 50 k 1 k, 0. 4 W 2 × 5. 62 , in parallel, 0. 4 W 10 ±5%, 1 W 4 × 42. 2 in parallel, 1 W 5. 11 k, 1 W 1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality. L1, L3 to L13, L18 to L22 and L24 are microstriplines on a double copper-clad printed-circuit board, with fibre-glass reinforced PTFE dielectric (r = 2. 2), thickness 1/16 inch; thickness of copper sheet 2 × 35 µm. L2 and L23 are soldered on to striplines L1 and L24 respectively. 2003 Sep 19 17 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 handbook, full pagewidth 119 130 strap strap strap Hollow rivets strap Hollow rivets strap 100 strap strap strap C24 VDD1 L2 L1 C1 50 input R1 C2 C4 C13 R6 L3 slider R7 R11 C38 IC1 to R2, R7 C36 C16 C37 C11 C14 L14 R8 L14 L15 L12 C20 L13 C22 C23 L22 VDD1 R10 50 output C15 C35 slider R2 C3 C8 C10 R3 R4 L4 C6 L6 L8 L10 C5 C7 L7 L9 L11 L5 R5 C9 C30 C31C33 L18 C28 L20 C21 C29 L19 L21 C34 C32 L16 VDD2 L23 C26 C27 C12 C17 C18 L17 R9 L17 C19 C25 L24 MBC436 Dimensions in mm. The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as an earth. Earth connections are made by means of copper straps for a direct contact between upper and lower sheets. Fig. 22 Printed-circuit board and component layout for 225 MHz class-AB test circuit. 2003 Sep 19 18 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 handbook, halfpage 2 MGE611 handbook, halfpage 3 MGE625 zi () 1 ri ZL () 2 XL 0 RL xi -1 1 ­2 150 200 f (MHz) 250 0 150 200 f (MHz) 250 Class-AB operation; VDS = 50 V; IDQ = 2 × 0. 5 A; RGS = 2. 8 (per section); PL = 250 W. Class-AB operation; VDS = 50 V; IDQ = 2 × 0. 5 A; RGS = 2. 8 (per section); PL = 250 W. Fig. 23 Input impedance as a function of frequency (series components); typical values per section. Fig. 24 Load impedance as a function of frequency (series components); typical values per section. handbook, halfpage 20 MGE624 Gp (dB) handbook, halfpage 10 Zi ZL MBA379 0 150 200 f (MHz) 250 Class-AB operation; VDS = 50 V; IDQ = 2 × 0. 5 A; RGS = 2. 8 (per section); PL = 250 W. Fig. 25 Definition of MOS impedance. Fig. 26 Power gain as a function of frequency; typical values per section. 2003 Sep 19 19 Philips Semiconductors Product Specification VHF push-pull power MOS transistor BLF278 scattering parameters VDS = 50 V; ID = 500 mA; note 1 f (MHz) |s11| 5 10 20 30 40 50 60 70 80 90 100 125 150 175 200 250 300 350 400 450 500 600 700 800 900 1000 Note 0. 87 0. 88 0. 88 0. 88 0. 89 0. 91 0. 92 0. 93 0. 94 0. 95 0. 95 0. 97 0. 97 0. 98 0. 98 0. 99 0. 99 0. 99 0. 99 0. 99 0. 99 0. 99 0. 99 0. 99 0. 99 0. 99 s11 -142. 1 -159. 8 -169. 0 -171. 2 -172. 2 -172. 9 -173. 5 -174. 1 -174. 7 -175. 2 -175. 7 -176. 9 -177. 9 -178. 7 -179. 5 179. 2 178. 1 177. 1 176. 1 175. 1 174. 2 172. 4 170. 7 168. 9 167. 1 165. 2 |s21| 60. 05 32. 09 15. 70 9. 98 6. 99 5. 24 4. 08 3. 26 2. 66 2. 22 1. 88 1. 27 0. 91 0. 69 0. 54 0. 35 0. 25 0. 19 0. 14 0. 11 0. 09 0. 07 0. 05 0. 04 0. 04 0. 04 s21 104. 3 91. 4 77. 3 68. 4 61. 0 55. 0 49. 6 44. 9 41. 0 37. 5 34. 0 26. 8 22. 7 19. 5 16. 0 12. 1 9. 1 8. 2 7. 2 8. 1 9. 7 14. 8 24. 0 35. 6 46. 0 60. 3 |s12| 0. 00 0. 00 0. 01 0. 01 0. 01 0. 01 0. 01 0. 01 0. 01 0. 00 0. 00 0. 00 0. 00 0. 00 0. 00 0. 01 0. 01 0. 01 0. 01 0. 02 0. 02 0. 02 0. 03 0. 03 0. 04 0. 04 s12 -19. 4 0. 68 13. 4 3. 4 -4. 4 -10. 3 -15. 0 -18. 3 -19. 8 -19. 7 -18. 0 -1. 9 35. 3 65. 3 78. 0 86. 7 87. 8 90. 3 91. 4 92. 2 91. 5 91. 4 91. 6 92. 5 93. 1 94. 1 |s22| 0. 83 167. 5 0. 62 0. 64 0. 66 0. 70 0. 74 0. 78 0. 80 0. 83 0. 85 0. 88 0. 91 0. 94 0. 95 0. 96 0. 98 0. 98 0. 99 0. 99 0. 99 0. 99 0. 99 1. 00 1. 00 1. 00 BLF278 s22 160. 9 165. 8 177. 6 -175. 8 -171. 2 -168. 1 -166. 8 -166. 5 -166. 5 -166. 7 -167. 4 -169. 4 -170. 0 -170. 8 -172. 4 -174. 0 -175. 5 -176. 5 -177. 6 -178. 3 -179. 2 179. 5 178. 3 177. 1 176. 0 175. 0 1. [. . . ] Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 Sep 19 22 Philips Semiconductors ­ a worldwide company Contact information For additional information please visit http://www. semiconductors. philips. com. [. . . ]